JPS5062783A - - Google Patents

Info

Publication number
JPS5062783A
JPS5062783A JP48111454A JP11145473A JPS5062783A JP S5062783 A JPS5062783 A JP S5062783A JP 48111454 A JP48111454 A JP 48111454A JP 11145473 A JP11145473 A JP 11145473A JP S5062783 A JPS5062783 A JP S5062783A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48111454A
Other languages
Japanese (ja)
Other versions
JPS5329479B2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11145473A priority Critical patent/JPS5329479B2/ja
Priority to GB4194774A priority patent/GB1461869A/en
Priority to NL7413156.A priority patent/NL163911C/xx
Priority to DE2447536A priority patent/DE2447536C2/de
Publication of JPS5062783A publication Critical patent/JPS5062783A/ja
Priority to US05/839,770 priority patent/US4178604A/en
Publication of JPS5329479B2 publication Critical patent/JPS5329479B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
JP11145473A 1973-10-05 1973-10-05 Expired JPS5329479B2 (en])

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11145473A JPS5329479B2 (en]) 1973-10-05 1973-10-05
GB4194774A GB1461869A (en) 1973-10-05 1974-09-26 Semiconductor laser device
NL7413156.A NL163911C (nl) 1973-10-05 1974-10-04 Halfgeleiderlaserinrichting.
DE2447536A DE2447536C2 (de) 1973-10-05 1974-10-04 Halbleiterlaser
US05/839,770 US4178604A (en) 1973-10-05 1977-10-06 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11145473A JPS5329479B2 (en]) 1973-10-05 1973-10-05

Publications (2)

Publication Number Publication Date
JPS5062783A true JPS5062783A (en]) 1975-05-28
JPS5329479B2 JPS5329479B2 (en]) 1978-08-21

Family

ID=14561620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11145473A Expired JPS5329479B2 (en]) 1973-10-05 1973-10-05

Country Status (4)

Country Link
JP (1) JPS5329479B2 (en])
DE (1) DE2447536C2 (en])
GB (1) GB1461869A (en])
NL (1) NL163911C (en])

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146196A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode laser
JPS58197788A (ja) * 1982-05-13 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 分布帰還形半導体レ−ザ装置の製造方法
JPS59155983A (ja) * 1983-02-24 1984-09-05 Sharp Corp 半導体レ−ザ素子の製造方法
JPS6017976A (ja) * 1983-07-11 1985-01-29 Fujitsu Ltd 半導体発光装置の製造方法
JPS6037793A (ja) * 1983-08-10 1985-02-27 Nec Corp 単一軸モ−ド半導体レ−ザ

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045749A (en) * 1975-11-24 1977-08-30 Xerox Corporation Corrugation coupled twin guide laser
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
JPS61222189A (ja) * 1985-03-15 1986-10-02 Sharp Corp 半導体レ−ザ
JPS6318686A (ja) * 1986-07-10 1988-01-26 Sharp Corp 半導体レ−ザ素子
DE3809609A1 (de) * 1988-03-22 1989-10-05 Siemens Ag Laserdiode zur erzeugung streng monochromatischer laserstrahlung
DE3934865A1 (de) * 1989-10-19 1991-04-25 Siemens Ag Hochfrequent modulierbarer halbleiterlaser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691476A (en) * 1970-12-31 1972-09-12 Bell Telephone Labor Inc Double heterostructure laser diodes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146196A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode laser
JPS58197788A (ja) * 1982-05-13 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 分布帰還形半導体レ−ザ装置の製造方法
JPS59155983A (ja) * 1983-02-24 1984-09-05 Sharp Corp 半導体レ−ザ素子の製造方法
JPS6017976A (ja) * 1983-07-11 1985-01-29 Fujitsu Ltd 半導体発光装置の製造方法
JPS6037793A (ja) * 1983-08-10 1985-02-27 Nec Corp 単一軸モ−ド半導体レ−ザ

Also Published As

Publication number Publication date
NL7413156A (nl) 1975-04-08
DE2447536C2 (de) 1983-09-15
GB1461869A (en) 1977-01-19
JPS5329479B2 (en]) 1978-08-21
NL163911C (nl) 1980-10-15
DE2447536A1 (de) 1975-04-17

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